GS81302T19GE-350

The GS81302T19E are built in compliance with the -II+ SRAM pin out standard for Common I/O synchronous SRAMs. They are 150,994,944-bit (144Mb) SRAMs. The GS81302T19E -II+ SRAMs are just one element in a family of low power, low voltage HSTL I/O SRAMs designed to operate at the speeds needed to implement economical high performance networking systems.

• 2.0 Clock Latency
• Simultaneous Read and Write ™ Interface
• Common I/O bus
• JEDEC-standard pinout and package
• Double Data Rate interface
• Byte Write controls sampled at data-in time
• Burst of 2 Read and Write
• On-Die Termination (ODT) on Data (D), Byte Write (BW), and Clock (K, K) inputs
• 1.8 V +100/–100 mV core power supply
• 1.5 V or 1.8 V HSTL Interface
• Pipelined read operation with self-timed Late Write
• Fully coherent read and write pipelines
• ZQ pin for programmable output drive strength
• Data Valid pin (QVLD) Support
• IEEE 1149.1 JTAG-compliant Boundary Scan
• 165-bump, 15 mm x 17 mm, 1 mm bump pitch BGA package
• RoHS-compliant 165-bump BGA package available