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GS81302T08GE-300I

SRAM Chip Sync Dual 1.8V 144M-Bit 16M x 8 0.45ns 165-Pin FBGA Tray

Manufacturer:Gsi Technology
Product Category: Memory, SRAMs
Avnet Manufacturer Part #: GS81302T08GE-300I
Secondary Manufacturer Part#: GS81302T08GE-300I
  • Legend Information Icon RoHS 10 Compliant
  • Legend Information Icon Tariff Charges

The GS81302T08E are built in compliance with the -II SRAM pin out standard for Common I/O synchronous SRAMs. They are 150,994,944-bit (144Mb) SRAMs. The GS81302T08E -II SRAMs are just one element in a family of low power, low voltage HSTL I/O SRAMs designed to operate at the speeds needed to implement economical high performance networking systems.

  • Simultaneous Read and Write ™ Interface
  • Common I/O bus
  • JEDEC-standard pinout and package
  • Double Data Rate interface
  • Byte Write (x36 and x18) and Nibble Write (x8) function
  • Burst of 2 Read and Write
  • 1.8 V +100/–100 mV core power supply
  • 1.5 V or 1.8 V HSTL Interface
  • Pipelined read operation with self-timed Late Write
  • Fully coherent read and write pipelines
  • ZQ pin for programmable output drive strength
  • IEEE 1149.1 JTAG-compliant Boundary Scan
  • Pin-compatible with present 9Mb, 18Mb, 36Mb and 72Mb devices
  • 165-bump, 15 mm x 17 mm, 1 mm bump pitch BGA package
  • RoHS-compliant 165-bump BGA package available

Technical Attributes

Find Similar Parts

Description Value
23 Bit
Pipelined
300 MHz
DDR
144 Mbit
Tin-Silver-Copper
260
300 MHz
700 mA
0.45 ns
16M x 8bit
144 Mbit
Surface Mount
MSL 3 - 168 hours
165
8 Bit
8 Bit
2
16 MWords
-40 to 100 °C
100 °C
-40 °C
165FBGA
165
17 x 15 x 1.04 mm
No
Industrial
SigmaDDR SRAM
FBGA
1.8 V
Synchronous
1.8000 V

ECCN / UNSPSC / COO

Description Value
Country of Origin: RECOVERY FEE
ECCN: 3A991.B.2.B
HTSN: 8542320041
Schedule B: 8542320040
In Stock :  0
Additional inventory
Factory Lead Time: 168 Weeks
Price for: Each
Quantity:
Min:105  Mult:105  
USD $:
105+
$180.642
210+
$173.604
420+
$166.566
630+
$159.528
840+
$156.5955