GS81302S36GE-300

GS81302S36E is built in compliance with the Sigma SIO DDR-II SRAM pin out standard for Separate I/O synchronous SRAMs. They are 150,994,944-bit (144Mb) SRAMs. These are the first in a family of wide, very low voltage HSTL I/O SRAMs designed to operate at the speeds needed to implement economical high performance networking systems.

• Simultaneous Read and Write Sigma SIO™ Interface
• JEDEC-standard pin out and package
• Dual Double Data Rate interface
• Byte Write controls sampled at data-in time
• DLL circuitry for wide output data valid window and future frequency scaling
• Burst of 2 Read and Write
• 1.8 V +100/–100 mV core power supply
• 1.5 V or 1.8 V HSTL Interface
• Pipelined read operation
• Fully coherent read and write pipelines
• ZQ mode pin for programmable output drive strength
• IEEE 1149.1 JTAG-compliant Boundary Scan
• 15 mm x 17 mm, 165 FPBGA
• RoHS-compliant 165-bump BGA package available
• 1MB product Family
• Default to SCD x36 Interleaved Pipeline mode