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GS81302S18GE-250I

SRAM Chip Sync Dual 1.8V 144M-Bit 8M x 18 0.45ns 165-Pin FBGA Tray

Manufacturer:Gsi Technology
Product Category: Memory, SRAMs
Avnet Manufacturer Part #: GS81302S18GE-250I
Secondary Manufacturer Part#: GS81302S18GE-250I
  • Legend Information Icon RoHS 10 Compliant
  • Legend Information Icon Tariff Charges

GS81302S18E is built in compliance with the Sigma SIO DDR-II SRAM pin out standard for Separate I/O synchronous SRAMs. They are 150,994,944-bit (144Mb) SRAMs. These are the first in a family of wide, very low voltage HSTL I/O SRAMs designed to operate at the speeds needed to implement economical high performance networking systems.

  • Simultaneous Read and Write Sigma SIO™ Interface
  • JEDEC-standard pin out and package
  • Dual Double Data Rate interface
  • Byte Write controls sampled at data-in time
  • DLL circuitry for wide output data valid window and future frequency scaling
  • Burst of 2 Read and Write
  • 1.8 V +100/–100 mV core power supply
  • 1.5 V or 1.8 V HSTL Interface
  • Pipelined read operation
  • Fully coherent read and write pipelines
  • ZQ mode pin for programmable output drive strength
  • IEEE 1149.1 JTAG-compliant Boundary Scan
  • 15 mm x 17 mm, 165 FPBGA
  • RoHS-compliant 165-bump BGA package available
  • 1MB product Family
  • Default to SCD x18 Interleaved Pipeline mode

Technical Attributes

Find Similar Parts

Description Value
22 Bit
Pipelined
250 MHz
DDR
144 Mbit
Tin-Silver-Copper
260
250 MHz
710 mA
0.45 ns
8M x 18bit
144 Mbit
Surface Mount
MSL 3 - 168 hours
165
18 Bit
18 Bit
2
8 MWords
-40 to 100 °C
100 °C
-40 °C
165FBGA
165
17 x 15 x 1.04 mm
No
Industrial
SigmaSIO DDR SRAM
FBGA
1.8 V
Synchronous
1.8000 V

ECCN / UNSPSC / COO

Description Value
Country of Origin: RECOVERY FEE
ECCN: 3A991.B.2.B
HTSN: 8542320041
Schedule B: 8542320040
In Stock :  0
Additional inventory
Factory Lead Time: 168 Weeks
Price for: Each
Quantity:
Min:105  Mult:105  
USD $:
105+
$180.642
210+
$173.604
420+
$166.566
630+
$159.528
840+
$156.5955