CNY17F-3M-V

The CNY17F-3 device consists of an infrared emitting diode optically coupled to a phototransistor. The device is packaged in a 6-pin DIP package and available in wide-lead spacing and SMD option.

• Current transfer ratios in selected narrow range groups CNY17F-3:100-200%
• High isolation voltage between input and output (Viso = 5000 Vrms)
• Creepage distance > 7.6 mm
• Operating temperature up to +110°C
• The CNY17F-3 offers no external base connection for minimum noise susceptibility
• Compact dual-in-line package
• Pb free and RoHS compliant.
• UL approved (No. E214129)
• VDE approved (No. 132249)
• SEMKO approved
• NEMKO approved
• DEMKO approved
• FIMKO approved
• CSA approved