ZVN2110A
Trans MOSFET N-CH 100V 0.32A 3-Pin E-Line
- RoHS 10 Compliant
- Tariff Charges
ZVN2110A is a N-channel enhancement mode vertical DMOS FET.
- Drain-source voltage is 100V
- Continuous drain current at Tamb=25° is 320mA
- Pulsed drain current is 6A
- Gate source voltage is ±20V
- Power dissipation at Tamb=25°C is 700mW
- Drain-source breakdown voltage is 100V min at ID=1mA, VGS=0V, Tamb=25°C
- Static drain-source on-state resistance is 4ohm max at VGS=10V, ID=1A, Tamb=25°C
- Turn-off delay time is 13ns max at VDD ˜25V, ID=1A, Tamb=25°C
- E-Line package
- Operating and storage temperature range from -55 to +150°C
Technical Attributes
Find Similar Parts
| Description | Value | |
|---|---|---|
| N Channel | ||
| 320 | ||
| 4 | ||
| 100 | ||
| 2.4 | ||
| 3 | ||
| 150 °C | ||
| 700 | ||
| TO-92 | ||
| Through Hole |
ECCN / UNSPSC / COO
| Description | Value |
|---|---|
| Country of Origin: | RECOVERY FEE |
| ECCN: | EAR99 |
| HTSN: | 8541210095 |
| Schedule B: | 8541210080 |