DMP6180SK3-13

DMP6180SK3-13 is a P-channel enhancement mode MOSFET. This new generation MOSFET has been designed to minimize the on state resistance (RDS(ON)) yet maintain superior switching performance, making it ideal for high efficiency power management applications. Typical applications include power management functions, DC-DC converters and analogue switches.

• Low on-resistance, low input capacitance
• Drain-source voltage is -60V at TA = +25°C
• Gate-source voltage is ±20V at TA = +25°C
• Continuous drain current is -14A at TC = +25°C, VGS = -10V, steady state
• Pulsed drain current (10µs pulse, duty cycle = 1%) is -25A at TA = +25°C
• Total power dissipation is 1.7W at TA = +25°C
• Static drain-source on-resistance is 110mohm max at VGS = -10V, ID = -12A, TA = +25°C
• Maximum body diode forward current is -4.1A at TA = +25°C
• TO252 (DPAK) package
• Operating and storage temperature range from -55 to +150°C