DMG2301L-7
Power MOSFET, P Channel, 20 V, 3 A, 0.12 ohm, SOT-23, Surface Mount
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![DMG2301L-7]()
Manufacturer:Diodes Incorporated
Product Category:
Discretes, FETs, Single MOSFETs
Avnet Manufacturer Part #: DMG2301L-7
Secondary Manufacturer Part#: DMG2301L-7
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RoHS 10 Compliant -
Tariff Charges
DMG2301L-7 is a P-channel enhancement mode MOSFET. This MOSFET is designed to minimize the on-state resistance (RDS(ON)) yet maintain superior switching performance, making it ideal for high-efficiency power management applications. Typical applications include backlighting, power management functions, DC-DC converters, and motor control.
- Low on-resistance, low input capacitance
- Fast switching speed
- Drain-source voltage is -20V at TA=+25°C
- Gate-source voltage is ±8V at TA=+25°C
- Continuous drain current is -3A at TA=+25°C, steady state, VGS=-4.5V
- Pulsed drain current is -10A at TA=+25°C
- Drain-source diode forward current ( t < 5 sec) is -0.75A at TA=+25°C
- Power dissipation is 1.5W
- SOT23 (standard) case
- Operating and storage temperature range from -55 to +150°C
Technical Attributes
Find Similar Parts
| Description | Value | |
|---|---|---|
| P Channel | ||
| 3 | ||
| 120 mOhm | ||
| 20 | ||
| 1.2 | ||
| 3 | ||
| 150 °C | ||
| 1.5 | ||
| SOT-23 | ||
| Surface Mount |
ECCN / UNSPSC / COO
| Description | Value |
|---|---|
| Country of Origin: | RECOVERY FEE |
| ECCN: | EAR99 |
| HTSN: | 8541210095 |
| Schedule B: | 8541210080 |
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