DGD2106MS8-13

DGD2106MS8-13 is a high-voltage/high-speed gate driver capable of driving N-channel MOSFETs and IGBTs in a high-side/low-side configuration. High voltage processing techniques enable the high-side to switch to 600V in a bootstrap operation. It is logic input is compatible with standard TTL and CMOS levels (down to 3.3V) to interface easily with controlling devices. The driver outputs feature high pulse current buffers designed for minimum driver cross-conduction. The application includes DC-DC converters, DC-AC inverters, AC-DC power supplies, motor controls, and class D power amplifiers.

• Drives two N-Channel MOSFETs or IGBTs in high-side/low-side configuration
• Outputs tolerant to negative transients
• Wide logic and low-side gate driver supply voltage, logic input (HIN and LIN) 3.3V capability
• Schmitt triggered logic inputs with internal pull down, undervoltage lockout for VCC
• Moulded plastic, green moulding compound, UL flammability classification rating 94V-0 case material
• High-side floating supply voltage range from -0.3 to +624V (TA = +25°C)
• Power dissipation linear derating factor is 0.625W (TA = +25°C)
• Thermal resistance, junction to ambient is 200°C/W (TA = +25°C)
• Turn-on rise time is 90ns typ (VS = 0V, (VBIAS (VCC, VBS) = 15V, CL = 1000pF, TA = +25°C)
• SO-8 package, ambient temperature range from -40 to +125°C