DGD2101MS8-13
IGBT/MOSFET Driver, 2 Channels, High Side and Low Side, 10 V to 20 V, 150 ns, 8 Pins, SOIC
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![DGD2101MS8-13]()
Manufacturer:Diodes Incorporated
Product Category:
Power Management, Drivers & Controllers, Gate Drivers
Avnet Manufacturer Part #: DGD2101MS8-13
Secondary Manufacturer Part#: DGD2101MS8-13
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RoHS 10 Compliant -
Tariff Charges
DGD2101MS8-13 is a high-voltage / high-speed gate driver capable of driving N-channel MOSFETs and IGBTs in a high-side/low-side configuration. High-voltage processing techniques enable the DGD2101M’s high side to switch to 600V in a bootstrap operation. T
- Floating high-side driver in bootstrap operation to 600V
- Drives two N-channel MOSFETs or IGBTs in high-side /low side configuration
- Outputs tolerant to negative transients
- Wide low-side gate driver and logic supply range fr
Technical Attributes
Find Similar Parts
| Description | Value | |
|---|---|---|
| High Side, Low Side, Low Sid | ||
| 160 ns | ||
| MSL 3 - 168 hours | ||
| 2 | ||
| 8 | ||
| 125 °C | ||
| -40 °C | ||
| 150 ns | ||
| MOSFET, IGBT, IGBT | ||
| 600 mA | ||
| 290 mA | ||
| 20 V | ||
| 10 V |
ECCN / UNSPSC / COO
| Description | Value |
|---|---|
| Country of Origin: | RECOVERY FEE |
| ECCN: | EAR99 |
| HTSN: | 8542390090 |
| Schedule B: | 8542390060 |
Factory Lead Time: