BSS138Q-7-F
Power MOSFET, N Channel, 50 V, 200 mA, 3.5 ohm, SOT-23, Surface Mount
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Manufacturer:Diodes Incorporated
Product Category:
Discretes, FETs, Single MOSFETs
Avnet Manufacturer Part #: BSS138Q-7-F
Secondary Manufacturer Part#: BSS138Q-7-F
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RoHS 10 Compliant -
Tariff Charges
BSS138Q-7-F is a N-channel enhancement mode MOSFET. This MOSFET is designed to meet the stringent requirements of automotive applications. It is qualified to AEC-Q101, supported by a PPAP and is ideal for use in system/load switch.
- Low on-resistance, low gate threshold voltage
- Low input capacitance, fast switching speed, low input/output leakage
- Drain-source voltage is 50V at TA=+25°C
- Continuous gate-source voltage is ±20V at TA=+25°C
- Continuous drain current is 200mA at TA=+25°C
- Pulsed drain current (10µs pulse duty cycle=1%) is 1A at TA=+25°C
- Power dissipation is 300mW at TA=+25°C
- Static drain-source on-resistance is 3.5ohm max at VGS=10V, ID=0.22A, TA=+25°C
- SOT23 case
- Operating and storage temperature range from -55 to +150°C
Technical Attributes
Find Similar Parts
| Description | Value | |
|---|---|---|
| N Channel | ||
| 200 | ||
| 3.5 | ||
| 50 | ||
| 1.5 | ||
| 3 | ||
| 150 °C | ||
| 300 | ||
| AEC-Q101 | ||
| SOT-23 | ||
| Surface Mount |
ECCN / UNSPSC / COO
| Description | Value |
|---|---|
| Country of Origin: | RECOVERY FEE |
| ECCN: | EAR99 |
| HTSN: | 8541210095 |
| Schedule B: | 8541210080 |
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