BSS123W-7-F
Power MOSFET, N Channel, 100 V, 170 mA, 6 ohm, SOT-323, Surface Mount
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Manufacturer:Diodes Incorporated
Product Category:
Discretes, FETs, Single MOSFETs
Avnet Manufacturer Part #: BSS123W-7-F
Secondary Manufacturer Part#: BSS123W-7-F
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RoHS 10 Compliant -
Tariff Charges
BSS123W-7-F is a N-channel enhancement mode MOSFET. This MOSFET is designed to minimize the on-state resistance (RDS(ON)) yet maintain superior switching performance, making it ideal for high-efficiency power-management applications. Typical applications include small servo motor controls, power MOSFET gate drivers, switching applications.
- Low gate threshold voltage, low input capacitance
- Fast switching speed, low input/output leakage
- High drain-source voltage rating
- Drain-source voltage is 100V at TA=+25°C
- Continuous gate-source voltage is ±20V at TA=+25°C
- Pulsed drain current is 680mA at TA=+25°C
- Total power dissipation is 200mW at TA=+25°C
- Static drain-source on-resistance is 6ohm max at VGS=10V, ID=0.17A, TA=+25°C
- SOT323 package
- Operating and storage temperature range from -55 to +150°C
Technical Attributes
Find Similar Parts
| Description | Value | |
|---|---|---|
| N Channel | ||
| 170 mA | ||
| 6 Ohm | ||
| 100 V | ||
| 2 V | ||
| 3 | ||
| 150 °C | ||
| 200 mW | ||
| SOT-323 | ||
| Surface Mount |
ECCN / UNSPSC / COO
| Description | Value |
|---|---|
| Country of Origin: | RECOVERY FEE |
| ECCN: | EAR99 |
| HTSN: | 8541210095 |
| Schedule B: | 8541210080 |
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