BC847BS-7-F
Bipolar Transistor Array, Dual, Dual NPN, 45 V, 100 mA, 200 mW
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Manufacturer:Diodes Incorporated
Product Category:
Discretes, Bipolar Transistors, Bipolar Transistor Arrays
Avnet Manufacturer Part #: BC847BS-7-F
Secondary Manufacturer Part#: BC847BS-7-F
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RoHS 10 Compliant -
Tariff Charges
BC847BS-7-F is a dual NPN transistor for switching and AF amplifier application.
- Ultra-small surface mount package
- Power dissipation is 200mW at TA = +25°C
- Collector-base breakdown voltage is 50V min at IC = 100µA, IB = 0, TA = +25°C
- Collector-emitter breakdown voltage is 45V min at IC = 10mA, IB = 0, TA = +25°C
- Emitter-base breakdown voltage is 6V min at IE = 100µA, IC = 0, TA = +25°C
- Gain bandwidth product is 100MHz min at VCE = 5.0V, IC = 10mA, f = 100MHz, TA = +25°C
- SOT363 case
- Operating and storage temperature range from -55 to +150°C
Technical Attributes
Find Similar Parts
| Description | Value | |
|---|---|---|
| 45 V | ||
| 100 mA | ||
| 200 | ||
| 6 | ||
| 150 °C | ||
| 200 mW | ||
| SOT-363 | ||
| Surface Mount | ||
| Dual NPN | ||
| 100 MHz |
ECCN / UNSPSC / COO
| Description | Value |
|---|---|
| Country of Origin: | RECOVERY FEE |
| ECCN: | EAR99 |
| HTSN: | 8541210095 |
| Schedule B: | 8541210080 |
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