2N5551
Transistor GP BJT NPN 160V 0.6A 3-Pin TO-92 Box
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Manufacturer:Central Semi
Product Category:
Discretes, Bipolar Transistors, Single Bipolar Transistors
Avnet Manufacturer Part #: 2N5551
Secondary Manufacturer Part#: 2N5551
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RoHS 10 Compliant -
Tariff Charges
The 2N5551 transistor is a silicon NPN general-purpose transistor with a maximum collector-emitter voltage of 160V and a maximum collector current of 600mA. It has a high current gain of 80-200, making it suitable for a wide range of applications. The transistor is 100% avalanche tested and has an excellent safe operating area, ensuring reliable operation in demanding environments. The 2N5551 is also designed to withstand high surge currents, making it ideal for applications that require robust performance.
- High-performance amplification
- Efficient switching
- Reliable operation in harsh environments
- Easy design and implementation
- High surge current capability
- Wide range of applications
- Meets or exceeds all applicable industry standards, including JEDEC, EIA, and ISO
- Compliant with RoHS and WEEE regulations
Technical Attributes
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| Description | Value |
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ECCN / UNSPSC / COO
| Description | Value |
|---|---|
| Country of Origin: | RECOVERY FEE |
| ECCN: | EAR99 |
| HTSN: | 8541210095 |
| Schedule B: | 8541210080 |
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