2N2222
Trans GP BJT NPN 30V 800mA 3-Pin TO-18 Box
Click image to enlarge
Manufacturer:Central Semi
Product Category:
Discretes, Bipolar Transistors, Single Bipolar Transistors
Avnet Manufacturer Part #: 2N2222
Secondary Manufacturer Part#: 2N2222
-
RoHS 10 Compliant -
Tariff Charges
The 2N2222 from Multicomp Pro is a through hole, low power bipolar transistor in TO-18 metal can package. This NPN silicon planar switching transistor is used for switching, linear DC power supply and VHF amplifier applications.
- Collector emitter breakdown voltage is 30V at IC = 10mA, IB = 0
- Continuous collector current (Ic) of 800mA
- Power dissipation is 500mW at Ta = 25°C
- Operating junction temperature range from -65°C to 200°C
- Collector emitter saturation voltage is 1.6V at IC = 500mA, IB = 50mA
- DC current gain is 30 at IC = 500mA, VCE = 10V
- Collector base breakdown voltage is 60V at IC = 10µA, IE = 0
- Transition frequency is 250MHz at IC = 20mA, VCE = 20V, f = 100MHz
Technical Attributes
Find Similar Parts
| Description | Value |
|---|
ECCN / UNSPSC / COO
| Description | Value |
|---|---|
| Country of Origin: | RECOVERY FEE |
| ECCN: | EAR99 |
| HTSN: | 8541210075 |
| Schedule B: | 8541210080 |
Factory Lead Time: