AFBR-S4N44P164M

AFBR-S4N44P164M is a Broadcom® 4×4 NUV-MT silicon photomultiplier array used for ultra-sensitive precision measurements of single photons. This SiPM is based on NUV-MT technology, which combines improved photo-detection efficiency (PDE) with a decreased dark count rate and reduced crosstalk compared to NUV-HD technology. The pitch of SiPMs is 4mm in both directions. Larger areas can be covered with a pitch of 16mm by tiling multiple AFBR-S4N44P164M arrays almost without any edge losses. The encapsulation for good mechanical stability and robustness is realized by an epoxy clear mold compound, which is highly transparent down to UV wavelengths, resulting in a broad response in the visible light spectrum with high sensitivity toward the blue and near UV region of the light spectrum. The Applications include X-ray and gamma-ray detection, nuclear medicine, positron emission tomography, safety and security, physics experiments, and cherenkov detection.

• 4×4 SiPM array, array size is 16.00mm × 16.00mm
• High PDE (63% at 420nm), excellent SPTR and CRT
• Excellent uniformity of breakdown voltage, excellent uniformity of gain
• 4-side tileable, with high fill factors, 40µm cell pitch
• Highly transparent epoxy protection layer
• Spectral range from 250 to 900nm (12V OV and 25°C)
• Peak sensitivity wavelength is 420nm typ (12V OV and 25°C)
• Breakdown voltage range from 32 to 33V (12V OV and 25°C), gain is 7.3 × 106 (12V OV and 25°C)
• Temperature coefficient of breakdown voltage is 30mV/°C typ (12V OV and 25°C)
• Operating temperature range from -20°C to +50°C