ACNV2601-000E

The ACNV2601 is an optically coupled gate that combines an AlGaAs light-emitting diode and an integrated photo detector housed in a widebody package. The distance-through-insulation (DTI) between the emitting diode and photo-detector is at 2 mm. The output of the detector IC is an open collector Schottky clamped transistor. The internal shield provides a guaranteed common mode transient immunity specification of 20 kV/µs at Vcm = 1500 V With creepage and clearance of greater than 13 mm, ACNV2601 is designed to provide high isolation voltage (7500 Vrms). It can withstand a continuous high working voltage of 2262 Vpeak and a surge voltage of 12,000 Vpeak, meeting IEC60747-5-5, UL and CSA standard for reinforced insulation. ACNV2601 provides the high insulation voltage protection at a high data rate of 10 MBd.

• High Voltage Insulation with minimum 13 mm creepage and clearance
• 20 kV/µs Minimum Common Mode Rejection (CMR) at VCM = 1500 V
• High Speed: 10 MBd Typical
• TTL Compatible
• Open Collector Output
• Guaranteed AC and DC performance over wide temperature: -40 °C to +105 °C
• Available in 10-pin widebody packages
• Safety Approval to be submitted for approval
  • Approval at 7500Vrms for 1 minute per UL1577
  • CSA
  • IEC/EN/DIN EN 60747-5-5 with Viorm =2262Vpeak