BLF6G27-10,118

10 W LDMOS power transistor for base station applications at frequencies from 2300 MHz to 2400 MHz and 2500 MHz to 2700 MHz.

• Typical 1-carrier N-CDMA performance (Single carrier N-CDMA with pilot, paging, sync and 6 traffic channels [Walsh codes 8 - 13]. PAR = 9.7 dB at 0.01 % probability on CCDF. Channel bandwidth is 1.23 MHz), a supply voltage of 28 V and an IDq of 130 mA:
• Qualified up to a maximum VDS operation of 32 V
• Integrated ESD protection
• Excellent ruggedness
• High efficiency
• Excellent thermal stability
• Designed for broadband operation
• Internally matched for ease of use
• Low gold plating thickness on leads
• Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances (RoHS)