PDP SEO Portlet

BLF6G22-180PN,135

Power LDMOS Transistor N-Channel 65V 5-Pin SOT-539A T/R

Manufacturer:Ampleon
Product Category: Discretes, RF Discretes, RF FETs
Avnet Manufacturer Part #: BLF6G22-180PN,135
Secondary Manufacturer Part#: BLF6G22-180PN,135
  • Legend Information Icon RoHS 10 Compliant
  • Legend Information Icon Tariff Charges

180 W LDMOS power transistor for base station applications at frequencies from 2000 MHz to 2200 MHz.

  • Typical 2-carrier W-CDMA performance at frequencies of 2110 MHz and 2170 MHz, a supply voltage of 32 V and an IDq of 1600 mA:
    • Average output power = 50 W
    • Power gain = 17.5 dB (typ)
    • Efficiency = 27.5 %
    • ACPR = -35 dBc
  • Easy power control
  • Integrated ESD protection
  • Excellent ruggedness
  • High efficiency
  • Excellent thermal stability
  • Designed for broadband operation (2000 MHz to 2200 MHz)
  • Internally matched for ease of use
  • Qualified up to a supply voltage of 32 V

Technical Attributes

Find Similar Parts

Description Value
N
65
5
225 °C

ECCN / UNSPSC / COO

Description Value
Country of Origin: RECOVERY FEE
ECCN: EAR99
HTSN: 8541290075
Schedule B: 8541290080
In Stock :  0
Additional inventory
Factory Lead Time: 777 Weeks
Price for: Each
Quantity:
Min:100  Mult:100  
USD $: