BLF647PSJ
Power LDMOS Transistor N-Channel 65V 4-Pin CDFM T/R
- RoHS 10 Compliant
- Tariff Charges
A 200 W LDMOS RF power transistor for broadcast transmitter and industrial applications. The transistor is suitable for the frequency range HF to 1500 MHz. The excellent ruggedness and broadband performance of this device makes it ideal for digital applications.
- Integrated ESD protection
- Excellent ruggedness
- High power gain
- High efficiency
- Excellent reliability
- Easy power control
- Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances
Technical Attributes
Find Similar Parts
| Description | Value | |
|---|---|---|
| N | ||
| 65 | ||
| 4 | ||
| 225 °C |
ECCN / UNSPSC / COO
| Description | Value |
|---|---|
| Country of Origin: | RECOVERY FEE |
| ECCN: | EAR99 |
| HTSN: | 8541290040 |
| Schedule B: | 8541290040 |