BLD6G22L-50,112

The BLD6G22L-50 and BLD22LS-50 incorporate a fully integrated Doherty solution using NXP’s state of the art GEN6 LDMOS technology. This device is perfectly suited for CDMA base station applications at frequencies from 2110 MHz to 2170 MHz. The main and peak device, input splitter and output combiner are integrated in a single package. This package consists of one gate and drain lead and two extra leads of which one is used for biasing the peak amplifier and the other is not connected. It only requires the proper input/output match and bias setting as with a normal class-AB transistor.

• Fully optimized integrated Doherty concept
• Integrated assymetrical power splitter at input
• Integrated power combiner
• Peak biasing down to 0 V
• Low junction temperature
• High efficiency
• 100 % peak power tested for guaranteed output power capability
• Integrated ESD protection
• Good pair match (main and peak on the same chip)
• Independent control of main and peak bias
• Internally matched for ease of use
• Excellent ruggedness
• Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances