AS7C34098A-15TIN

The AS7C34098A is a high-performance CMOS 4,194,304-bit Static Random Access Memory (SRAM) device organized as 262,144 words × 16 bits. It is designed for memory applications where fast data access, low power, and simple interfacing are desired.Equal address access and cycle times (tAA, tRC, tWC) of 10/12/15/20 ns with output enable access times (tOE ) of 4/5/6/7 ns are ideal for high-performance applications. The chip enable input CE permits easy memory expansion with multiple-bank memory systems.When CE is high the device enters standby mode. The device is guaranteed not to exceed 28.8mW power consumption in CMOS standby mode. A write cycle is accomplished by asserting write enable (WE) and chip enable (CE). Data on the input pins I/O1–I/O16 is written on the rising edge of WE (write cycle 1) or CE (write cycle 2). To avoid bus contention, external devices should drive I/O pins only after outputs have been disabled with output enable (OE) or write enable (WE).A read cycle is accomplished by asserting output enable (OE) and chip enable (CE), with write enable (WE) high. The chip drives I/O pins with the data word referenced by the input address. When either chip enable or output enable is inactive, or write enable is active, output drivers stay in high-impedance mode.The device provides multiple center power and ground pins, and separate byte enable controls, allowing individual bytes to be written and read. LB controls the lower bits, I/O1–I/O8, and UB controls the higher bits, I/O9–I/O16.All chip inputs and outputs are TTL- and CMOS-compatible, and operation is for 3.3V (AS7C34098A) supply. The device is available in the JEDEC standard 400-mil, 44-pin SOJ, TSOP 2.

• Industrial and commercial temperature
• Organization: 262,144 words × 16 bits
• Center power and ground pins
• High speed
  • 10/12/15/20 ns address access time
  • 4/5/6/7 ns output enable access time
• Low power consumption: ACTIVE
  • 650 mW /max @ 10 ns
• Low power consumption: STANDBY
  • 28.8 mW /max CMOS
• Individual byte read/write controls
• Easy memory expansion with CE, OE inputs
• TTL- and CMOS-compatible, three-state I/O
• JEDEC standard packages
  • 44-pin SOJ -400-mil
  • 44-pin TSOP 2
  • 48-pin Mini BGA
• ESD protection = 2000 volts
• Latch-up current = 200 mA