AS6C8016-55ZIN
SRAM Chip Async Single 3V 8M-Bit 512K x 16 55ns 44-Pin TSOP-II
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Manufacturer:Alliance Memory
Avnet Manufacturer Part #: AS6C8016-55ZIN
Secondary Manufacturer Part#: AS6C8016-55ZIN
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RoHS 10 Compliant -
Tariff Charges
The AS6C8016-55ZIN is a 512K x 16-bit super low power SMOS SRAM organized as 524288 words by 16-bits. It is fabricated using very high performance, high reliability CMOS technology. Its standby current is stable within the range of operating temperature. Designed for low power application and particularly well suited for battery back-up non-volatile memory application.
- Low power consumption
- All outputs TTL compatible
- Fully static operation
- Tri-state output
Technical Attributes
Find Similar Parts
| Description | Value | |
|---|---|---|
| 19 Bit | ||
| 8 Mbit | ||
| TSOP-II | ||
| Surface Mount | ||
| Matte Tin|Tin-Bismuth | ||
| 260 | ||
| 60 mA | ||
| 55 ns | ||
| 512K x 16bit | ||
| 8 Mbit | ||
| Surface Mount | ||
| 44 | ||
| 16 Bit | ||
| 16 Bit | ||
| 1 | ||
| 512 kWords | ||
| -40 to 85 °C | ||
| 85 °C | ||
| -40 °C | ||
| 44TSOP-II | ||
| 44 | ||
| 18.42 x 10.16 x 1 mm | ||
| No | ||
| Industrial | ||
| Asynchronous SRAM | ||
| TSOP-II | ||
| 5.5 V | ||
| 2.7 V | ||
| 3 V | ||
| Asynchronous | ||
| 3.0000 V |
ECCN / UNSPSC / COO
| Description | Value |
|---|---|
| Country of Origin: | RECOVERY FEE |
| ECCN: | EAR99 |
| HTSN: | 8542320041 |
| Schedule B: | 8542320040 |
Factory Lead Time: