AS6C8008-55ZIN
SRAM Chip Async Single 3V 8M-Bit 1M x 8 55ns 44-Pin TSOP-II
- RoHS 10 Compliant
- Tariff Charges
AS6C8008-55ZIN is a 1024K X 8bit super low power CMOS SRAM. It is an 8,388,608-bit low-power CMOS static random access memory organized as 1,048,576 words by 8bits. It is fabricated using very high-performance, high-reliability CMOS technology. Its standby current is stable within the range of operating temperature. It is well designed for very low-power system applications, and particularly well suited for battery backup non-volatile memory applications.
- Fast access time : 55ns
- Low power consumption: 30mA (typical) operating current, 6µA (typ) standby current
- Single 2.7V to 5.5V power supply
- All inputs and outputs TTL compatible
- Fully static operation, tri-state output
- Data retention voltage is 1.5V (minimum)
- 44pin TSOP II package
- Industrial operating temperature range from -40°C to 85°C
Technical Attributes
Find Similar Parts
| Description | Value | |
|---|---|---|
| 20 Bit | ||
| 8 Mbit | ||
| TSOP-II | ||
| Surface Mount | ||
| 60 mA | ||
| 55 ns | ||
| 1M x 8bit | ||
| 8 Mbit | ||
| Surface Mount | ||
| 44 | ||
| 8 Bit | ||
| 8 Bit | ||
| 1 | ||
| -40 to 85 °C | ||
| 85 °C | ||
| -40 °C | ||
| 44TSOP-II | ||
| 44 | ||
| 18.42 x 10.16 x 1 mm | ||
| No | ||
| Industrial | ||
| Asynchronous SRAM | ||
| TSOP-II | ||
| 5.5 V | ||
| 2.7 V | ||
| 3 V | ||
| Asynchronous | ||
| 3.0000 V |
ECCN / UNSPSC / COO
| Description | Value |
|---|---|
| Country of Origin: | RECOVERY FEE |
| ECCN: | EAR99 |
| HTSN: | 8542320041 |
| Schedule B: | 8542320040 |