AS6C8008-55BIN
SRAM Chip Async Single 3V 8M-Bit 1M x 8 55ns 48-Pin TFBGA
- RoHS 10 Compliant
- Tariff Charges
The AS6C8008 is a 8,388,608-bit low power CMOS static random access memory organized as 1,048,576 words by 8 bits. It is fabricated using very high performance, high reliability CMOS technology. Its standby current is stable within the range of operating temperature.The AS6C8008 is well designed for very low power system applications, and particularly well suited for battery back-up nonvolatile memory application.The AS6C8008 operates from a single power supply of 2.7V ~ 5.5V and all inputs and outputs are fully TTL compatible.
- Fast access time : 55ns
- Low power consumption:
- Operating current : 30mA (TYP.)
- Standby current : 6µA (TYP.) LL-version
- Single 2.7V ~ 5.5V power supply
- All inputs and outputs TTL compatible
- Fully static operation
- Tri-state output
- Data retention voltage : 1.5V (MIN.)
- Lead free and green package available
- Package :
- 44-pin 400 mil TSOP-II
- 48-ball 6mm x 8mm TFBGA
Technical Attributes
Find Similar Parts
| Description | Value | |
|---|---|---|
| 20 Bit | ||
| 8 Mbit | ||
| 60 mA | ||
| 55 ns | ||
| 8 Mbit | ||
| Surface Mount | ||
| 48 | ||
| 8 Bit | ||
| 8 Bit | ||
| 1 | ||
| -40 to 85 °C | ||
| 85 °C | ||
| -40 °C | ||
| 48TFBGA | ||
| 48 | ||
| 8 x 6 x 1.05 mm | ||
| No | ||
| Industrial | ||
| TFBGA | ||
| 5.5 V | ||
| 2.7 V | ||
| 3 V | ||
| Asynchronous | ||
| 3.0000 V |
ECCN / UNSPSC / COO
| Description | Value |
|---|---|
| Country of Origin: | RECOVERY FEE |
| ECCN: | EAR99 |
| HTSN: | 8542320041 |
| Schedule B: | 8542320040 |