AS6C6416-55TIN
SRAM Chip Async Single 3.3V 64M-Bit 4M X 16 55ns 48-Pin TSOP-I Tray
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Manufacturer:Alliance Memory
Avnet Manufacturer Part #: AS6C6416-55TIN
Secondary Manufacturer Part#: AS6C6416-55TIN
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RoHS 10 Compliant -
Tariff Charges
AS6C6416-55TIN is a 64Mbits (4Mx16) low-power CMOS SRAM. It is a 67,108,864-bit low-power CMOS static random access memory organized as 4,194,304 words by 16bits or 8,388,608 words by 8bits. It is fabricated using very high-performance, high-reliability CMOS technology. Its standby current is stable within the range of operating temperature. It is well designed for low-power applications, and particularly well suited for battery backup non-volatile memory applications.
- Fast access time is 55ns
- Low power consumption: 12mA (typ) operating current, 12µA(typ) standby current
- Single 2.7V to 3.6V power supply
- All inputs and outputs TTL compatible
- Fully static operation, tri-state output
- Data retention voltage is 1.2V (minimum)
- 48-pin TSOP I package
- Operating temperature range from -40°C to +85°C
- Output leakage current is 1µA maximum (VCC ? VOUT ? VSS, output disabled)
Technical Attributes
Find Similar Parts
| Description | Value | |
|---|---|---|
| 21, 22 Bit | ||
| SDR | ||
| 64 Mbit | ||
| TSOP-I | ||
| Surface Mount | ||
| 20 mA | ||
| 55 ns | ||
| 4M x 16bit | ||
| 64 Mbit | ||
| Surface Mount | ||
| MSL 3 - 168 hours | ||
| 48 | ||
| 16 Bit | ||
| 16 Bit | ||
| 1 | ||
| 4 MWords | ||
| 85 °C | ||
| -40 °C | ||
| 48TSOP-I | ||
| 48 | ||
| 12 x 18.4 x 1 mm | ||
| 0 | ||
| Industrial | ||
| Asynchronous SRAM | ||
| TSOP-I | ||
| 3.6 V | ||
| 2.7 V | ||
| 3 V | ||
| 3.3000 V |
ECCN / UNSPSC / COO
| Description | Value |
|---|---|
| Country of Origin: | RECOVERY FEE |
| ECCN: | EAR99 |
| HTSN: | 8542320041 |
| Schedule B: | 8542320040 |
Factory Lead Time: