AS6C4008-55TIN
SRAM, Asynchronous, 4 Mbit, 512K x 8bit, TSOP-I, 32 Pins, 2.7 V
- RoHS 10 Compliant
- Tariff Charges
AS6C4008-55TIN is a 4,194,304-bit low power CMOS static random access memory organized as 524,288 words by 8bits. It is fabricated using very high performance, high reliability CMOS technology. Its standby current is stable within the range of operating temperature. It is well designed for very low power system applications, and particularly well suited for battery back-up non-volatile memory application. It operates from a single power supply of 2.7V to 5.5V and all inputs and outputs are fully TTL compatible.
- Access time is 55ns
- Low power consumption: 30mA (typ) operating current, 4µA (typ) standby current
- All outputs TTL compatible
- Fully static operation, tri-state output
- Data retention voltage is 1.5V (minimum)
- 512k x 8 organization, 5V VCC
- 32pin TSOP 1 package
- Industrial operating temperature range from -40°C to 85°C
Technical Attributes
Find Similar Parts
| Description | Value | |
|---|---|---|
| 19 Bit | ||
| 4 Mbit | ||
| TSOP-I | ||
| Surface Mount | ||
| 60 mA | ||
| 55 ns | ||
| 512K x 8bit | ||
| 4 Mbit | ||
| Surface Mount | ||
| 32 | ||
| 8 Bit | ||
| 8 Bit | ||
| 1 | ||
| 512 kWords | ||
| -40 to 85 °C | ||
| 85 °C | ||
| -40 °C | ||
| 32TSOP-I | ||
| 32 | ||
| 8 x 18.4 x 1 mm | ||
| No | ||
| Industrial | ||
| Asynchronous SRAM | ||
| TSOP-I | ||
| 5.5 V | ||
| 2.7 V | ||
| 3 V | ||
| Asynchronous | ||
| 3.0000 V |
ECCN / UNSPSC / COO
| Description | Value |
|---|---|
| Country of Origin: | RECOVERY FEE |
| ECCN: | EAR99 |
| HTSN: | 8542320041 |
| Schedule B: | 8542320040 |