AS6C2016-55BIN
SRAM Chip Async Single 3V 2M-Bit 128K x 16 55ns 48-Pin TFBGA
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Manufacturer:Alliance Memory
Avnet Manufacturer Part #: AS6C2016-55BIN
Secondary Manufacturer Part#: AS6C2016-55BIN
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RoHS 10 Compliant -
Tariff Charges
The AS6C2016 is a 2,097,152-bit low power CMOS static random access memory organized as 131,072 words by 16 bits. It is fabricated using very high performance, high reliability CMOS technology. Its standby current is stable within the range of operating temperature.The AS6C2016 is well designed for low power application, and particularly well suited for battery back-up nonvolatile memory application. The AS6C2016 operates from a single power supply of 2.7V ~ 5.5V and all inputs and outputs are fully TTL compatible.
- Fast access time : 55ns
- Low power consumption:
- Operating current : 20/18mA (TYP.)
- Standby current : 2µA (TYP.)
- Single 2.7V ~ 5.5V power supply
- All inputs and outputs TTL compatible
- Fully static operation
- Tri-state output
- Data byte control :
- LB# (DQ0 ~ DQ7)
- UB# (DQ8 ~ DQ15)
- Data retention voltage : 2.0V (MIN.)
- Lead free and green package available
- Package : 44-pin 400 mil TSOP-II
- 48-ball 6mm x 8mm TFBGA
Technical Attributes
Find Similar Parts
| Description | Value | |
|---|---|---|
| 17 Bit | ||
| 2 Mbit | ||
| 60 mA | ||
| 55 ns | ||
| 2 Mbit | ||
| Surface Mount | ||
| 48 | ||
| 16 Bit | ||
| 16 Bit | ||
| 1 | ||
| 128 kWords | ||
| -40 to 85 °C | ||
| 85 °C | ||
| -40 °C | ||
| 48TFBGA | ||
| 48 | ||
| 8 x 6 x 1.05 mm | ||
| No | ||
| Industrial | ||
| TFBGA | ||
| 5.5 V | ||
| 2.7 V | ||
| 3 V | ||
| Asynchronous | ||
| 3.0000 V |
ECCN / UNSPSC / COO
| Description | Value |
|---|---|
| Country of Origin: | RECOVERY FEE |
| ECCN: | EAR99 |
| HTSN: | 8542320041 |
| Schedule B: | 8542320040 |
Factory Lead Time: