AS6C2008A-55STIN
SRAM Chip Async Single 3V 2M-Bit 256K x 8 55ns 32-Pin STSOP
- RoHS 10 Compliant
- Tariff Charges
The AS6C2008A is a 2,097,152-bit low power CMOS static random access memory organized as 262,144 words by 8 bits. It is fabricated using very high performance, high reliability CMOS technology. Its standby current is stable within the range of operating temperature.The AS6C2008A is well designed for very low power system applications, and particularly well suited for battery back-up nonvolatile memory application. The AS6C2008A operates from a single power supply of 2.7V ~ 5.5V and all outputs are fully TTL compatible.
- Fast access time : 55ns
- Low power consumption:
- Operating current : 20/18mA (TYP.)
- Standby current : 2µA (TYP.)
- Single 2.7V ~ 5.5V power supply
- All outputs TTL compatible
- Fully static operation
- Tri-state output
- Data retention voltage : 2.0V (MIN.)
- Lead free and green package available
- Package : 32-pin 8mm x 20mm TSOP-I
- 32-pin 8mm x 13.4mm STSOP
- 32-pin 450 mil SOP
- 32-pin 600 mil P-DIP
- 36-ball 6mm x 8mm TFBGA
Technical Attributes
Find Similar Parts
| Description | Value | |
|---|---|---|
| 18 Bit | ||
| 2 Mbit | ||
| 60 mA | ||
| 55 ns | ||
| 2 Mbit | ||
| Surface Mount | ||
| 32 | ||
| 8 Bit | ||
| 8 Bit | ||
| 1 | ||
| 256 kWords | ||
| -40 to 85 °C | ||
| 85 °C | ||
| -40 °C | ||
| 32STSOP | ||
| 32 | ||
| 8 x 11.8 x 1 mm | ||
| No | ||
| Industrial | ||
| STSOP | ||
| 5.5 V | ||
| 2.7 V | ||
| 3 V | ||
| Asynchronous | ||
| 3.0000 V |
ECCN / UNSPSC / COO
| Description | Value |
|---|---|
| Country of Origin: | RECOVERY FEE |
| ECCN: | EAR99 |
| HTSN: | 8542320041 |
| Schedule B: | 8542320040 |