AS6C2008-55TIN
SRAM Chip Async Single 3V 2M-Bit 256K x 8 55ns 32-Pin TSOP-I
- RoHS 10 Compliant
- Tariff Charges
The AS6C2008 is a 2,097,152-bit low power CMOS static random access memory organized as 262,144 words by 8 bits. It is fabricated using very high performance, high reliability CMOS technology. Its standby current is stable within the range of operating temperature.The AS6C2008 is well designed for very low power system applications, and particularly well suited for battery back-up nonvolatile memory application. The AS6C2008 operates from a single power supply of 2.7V ~ 3.6V.
- Access time : 55ns
- Low power consumption:
- Operating current :20mA (TYP.)
- Standby current : 20mA(TYP.)L Version
- 1µA (TYP.) LL-version
- Single 2.7V ~ 3.6V power supply
- Fully static operation
- Tri-state output
- Data retention voltage : 1.5V (MIN.)
- All Products ROHS Compliant
- Package : 32-pin 450 mil SOP
- 32-pin 8mm x 20mm TSOP-I
- 32-pin 8mm x 13.4mm sTSOP
- 36-ball 6mm x 8mm TFBGA
Technical Attributes
Find Similar Parts
| Description | Value | |
|---|---|---|
| 18 Bit | ||
| 2 Mbit | ||
| 35 mA | ||
| 55 ns | ||
| 2 Mbit | ||
| Surface Mount | ||
| 32 | ||
| 8 Bit | ||
| 8 Bit | ||
| 1 | ||
| 256 kWords | ||
| -40 to 85 °C | ||
| 85 °C | ||
| -40 °C | ||
| 32TSOP-I | ||
| 32 | ||
| 8 x 18.4 x 1 mm | ||
| No | ||
| Industrial | ||
| TSOP-I | ||
| 3.6 V | ||
| 2.7 V | ||
| 3 V | ||
| Asynchronous | ||
| 3.0000 V |
ECCN / UNSPSC / COO
| Description | Value |
|---|---|
| Country of Origin: | RECOVERY FEE |
| ECCN: | EAR99 |
| HTSN: | 8542320041 |
| Schedule B: | 8542320040 |