AS6C1616A-55BIN
SRAM Chip Async Single 3.3V 16M-Bit 1M x 16 55ns 48-Pin FBGA
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Manufacturer:Alliance Memory
Avnet Manufacturer Part #: AS6C1616A-55BIN
Secondary Manufacturer Part#: AS6C1616A-55BIN
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RoHS 10 Compliant -
Tariff Charges
The AS6C1616A - 55%,1 is fabricated by Alliance's advanced full CMOS process technology. The device supports industrial temperature range and Chip Scale Package for user flexibility of system design. The device also supports low data retention voltage for battery backup operation with low data retention current.
- Process Technology : 0.15µm Full CMOS
- Organization : 1M x 16 bit
- Power Supply Voltage : 2.7V ~ 3.6V
- Low Data Retention Voltage : 1.5V(Min.)
- Three state output and TTL Compatible
- Package Type : 48-FPBGA
Technical Attributes
Find Similar Parts
| Description | Value | |
|---|---|---|
| 20 Bit | ||
| 16 Mbit | ||
| 70 mA | ||
| 55 ns | ||
| 16 Mbit | ||
| Surface Mount | ||
| 48 | ||
| 16 Bit | ||
| 16 Bit | ||
| 1 | ||
| 1 MWords | ||
| -40 to 85 °C | ||
| 85 °C | ||
| -40 °C | ||
| 48FBGA | ||
| 48 | ||
| 10 x 8 x 0.7 mm | ||
| No | ||
| Industrial | ||
| FBGA | ||
| 3.6 V | ||
| 2.7 V | ||
| 3.3 V | ||
| Asynchronous | ||
| 3.3000 V |
ECCN / UNSPSC / COO
| Description | Value |
|---|---|
| Country of Origin: | RECOVERY FEE |
| ECCN: | EAR99 |
| HTSN: | 8542320041 |
| Schedule B: | 8542320040 |
Factory Lead Time: