AS6C1016-55ZINTR
SRAM Chip Single 3V 1M-Bit 64K x 16 55ns 44-Pin TSOP-II T/R
- RoHS 10 Compliant
- Tariff Charges
The AS6C1016 is a 1,048,576-bit low power CMOS static random access memory organized as 65,536 words by 16 bits. It is fabricated using very high performance, high reliability CMOS technology. Its standby current is stable within the range of operating temperature.The AS6C1016 is well designed for low power application, and particularly well suited for battery back-up nonvolatile memory application. The AS6C1016 operates from a single power supply of 2.7V ~ 5.5V and all inputs and outputs are fully TTL compatible.
- Fast access time : 55ns
- Low power consumption:
- Operating current : 20mA (TYP.)
- Standby current : 2µA (TYP.)
- Single 2.7V ~ 5.5V power supply
- All outputs TTL compatible
- Fully static operation
- Tri-state output
- Data byte control :
- LB# (DQ0 ~ DQ7)
- UB# (DQ8 ~ DQ15)
- Data retention voltage : 1.5V (MIN.)
- Green package available
- Package : 44-pin 400 mil TSOP-II
- 48-ball 6mm x 8mm TFBGA
Technical Attributes
Find Similar Parts
| Description | Value | |
|---|---|---|
| 16 Bit | ||
| 1 Mbit | ||
| 60 mA | ||
| 55 ns | ||
| 1 Mbit | ||
| Surface Mount | ||
| 44 | ||
| 16 Bit | ||
| 16 Bit | ||
| 1 | ||
| 64 kWords | ||
| -40 to 85 °C | ||
| 85 °C | ||
| -40 °C | ||
| 44TSOP-II | ||
| 44 | ||
| 18.415 x 10.16 x 1 mm | ||
| 0 | ||
| Industrial | ||
| TSOP-II | ||
| 5.5 V | ||
| 2.7 V | ||
| 3 V | ||
| Asynchronous | ||
| 3.0000 V |
ECCN / UNSPSC / COO
| Description | Value |
|---|---|
| Country of Origin: | RECOVERY FEE |
| ECCN: | EAR99 |
| HTSN: | 8542320041 |
| Schedule B: | 8542320040 |