AS6C1008-55SINTR
SRAM Chip Async Single 3V 1M-Bit 128K x 8 55ns 32-Pin SOP
- RoHS 10 Compliant
- Tariff Charges
The AS6C1008 is a 1,048,57 6-bit low power CMOS static random access memory organized as 131,072 words by 8 bits. It is fabricated using very high performance, high reliability CMO S technology. Its standby current is stable within the range of operating temperature. The AS6C1008 is well designed for very low power system applications, and particularly well suited for battery back-up non-volatile memory application. The AS6C1008 operates from a single power supply of 2.7V ~ 5.5V.
- Access time :55ns
- Low power consumption:
- Operating current:10 mA (TYP.)
- Standby current: 1 µA (TYP.)
- Fully Compatible with all Competitors 3.3V product
- Fully static operation
- Tri-state output
- Data retention voltage : 1.5V (MIN.)
- All products are ROHS Compliant
- Package : 32-pin 450 mil SOP
- 32-pin 600 mil P-DIP
- 32-pin 8mm x 20mm TSOP-I
- 32-pin 8mm x 13.4mm sTSOP
- 36-ball 6mm x 8mm TFBGA
Technical Attributes
Find Similar Parts
| Description | Value | |
|---|---|---|
| 17 Bit | ||
| 1 Mbit | ||
| 60 mA | ||
| 55 ns | ||
| 1 Mbit | ||
| Surface Mount | ||
| 32 | ||
| 8 Bit | ||
| 8 Bit | ||
| 1 | ||
| 128 kWords | ||
| -40 to 85 °C | ||
| 85 °C | ||
| -40 °C | ||
| 32SOP | ||
| T/R | ||
| 32 | ||
| 0 | ||
| Industrial | ||
| 5.5 V | ||
| 2.7 V | ||
| 3 V | ||
| 3.0000 V |
ECCN / UNSPSC / COO
| Description | Value |
|---|---|
| Country of Origin: | RECOVERY FEE |
| ECCN: | EAR99 |
| HTSN: | 8542320041 |
| Schedule B: | 8542320040 |