AS4C512M16D3LB-12BIN

AS4C512M16D3LB-12BIN is a 512M x 16bit DDR3L synchronous DRAM (SDRAM). The 8Gb double-data-rate-3L DRAM is double data rate architecture to achieve high-speed operation. It is internally configured as an eight bank DRAM. The 8Gb chip is organized as 64Mbit x 16I/Os x 8 bank devices. This synchronous device achieves high speed double-data-rate transfer rates of up to 1600Mb/sec/pin for general applications. The chip is designed to comply with all key DDR3L DRAM key features and all of the control and address inputs are synchronized with a pair of externally supplied differential clocks. Inputs are latched at the cross point of differential clocks (CK rising and CK# falling). All I/Os are synchronized with differential DQS pair in a source synchronous fashion.

• JEDEC standard compliant, supports JEDEC clock jitter specification
• Power supplies: VDD and VDDQ = +1.35V, backward compatible to VDD and VDDQ =+1.5V ±0.075V
• Fully synchronous operation, fast clock rate: 800MHz
• Differential clock, CK and CK#, bidirectional differential data strobe, DQS and DQS#
• 8 internal banks for concurrent operation, 8n-bit prefetch architecture
• Pipelined internal architecture, precharge and active power down
• Programmable mode and extended mode registers, additive latency (AL): 0, CL-1, CL-2
• Programmable burst lengths: 4, 8, burst type: sequential/interleave, output driver impedance control
• Write levelling, ZQ calibration, dynamic ODT (Rtt-Nom and Rtt-WR)
• 96-ball FBGA package, industrial temperature range from -40°C to 95°C