AS4C2M32S-6BIN

The 64Mb SDRAM is a high-speed CMOS synchronous DRAM containing 64 Mbits. It is internally configured as a quad 512K x 32 DRAM with a synchronous interface (all signals are registered on the positive edge of the clock signal, CLK). Each of the 512K x 32 bit banks is organized as 2048 rows by 256 columns by 32 bits. Read and write accesses to the SDRAM are burst oriented; accesses start at a selected location and continue for a programmed number of locations in a programmed sequence. Accesses begin with the registration of a BankActivate command which is then followed by a Read or Write command.

The SDRAM provides for programmable Read or Write burst lengths of 1, 2, 4, 8, or full page, with a burst termination option. An auto precharge function may be enabled to provide a self-timed row precharge that is initiated at the end of the burst sequence. The refresh functions, either Auto or Self Refresh are easy to use.

By having a programmable mode register, the system can choose the most suitable modes to maximize its performance. These devices are well suited for applications requiring high memory bandwidth.

• Fast access time: 5.5/5.5 ns
• Fast Clock rate: 200/166/143 MHz
• Fully synchronous operation
• Internal pipelined architecture
• Four internal banks (512K x 32bit x 4bank)
• Programmable Mode
  • CAS Latency: 2 or 3
  • Burst Length: 1, 2, 4, 8, or full page
  • Burst Type: Sequential or Interleaved
  • Burst-Read-Single-Write
• Burst stop function
• Individual byte controlled by DQM0-3
• Auto Refresh and Self Refresh
• Operating temperature range
  • Commercial (0 ~ 70°C)
  • Industrial (-40 ~ 85°C)
• 4096 refresh cycles/64ms
• Single +3.3V ± 0.3V power supply
• Interface: LVTTL
• 86-pin 400 x 875 mil plastic TSOP II package, 0.50mm pin pitch
  • Pb and Halogen Free