AS4C16M16SB-6BIN

AS4C16M16SB-6BIN is a 16M x 16bit synchronous DRAM (SDRAM). It is a s a high-speed CMOS synchronous DRAM containing 256Mbits. It is internally configured as 4 Banks of 4M word x 16 DRAM with a synchronous interface (all signals are registered on the positive edge of the clock signal, CLK). Read and write accesses to the SDRAM are burst-oriented; accesses start at a selected location and continue for a programmed number of locations in a programmed sequence. Accesses begin with the registration of a BankActivate command which is then followed by a read or write command. It provides for programmable Read or Write burst lengths of 1, 2, 4, 8, or full page, with a burst termination option. An auto precharge function may be enabled to provide a self-timed row precharge that is initiated at the end of the burst sequence. It is well suited for applications requiring high memory bandwidth and particularly well suited to high-performance PC applications.

• Fully synchronous operation, internal pipelined architecture
• 4M word x 16bit x 4-bank, auto refresh and self refresh
• Programmable mode registers, CAS latency: 2 or 3, burst length: 1, 2, 4, 8, or full page
• Burst type: sequential or interleaved, burst stop function
• 8192 refresh cycles/64ms, CKE power down mode
• Single +3.3V ±0.3V power supply
• LVTTL interface
• 166MHz frequency
• 54 ball FBGA package
• Industrial temperature range from -40°C to 85°C