DDR2 DRAM
ISSI's 512Mb DDR2 SDRAM uses a double-data-rate architecture to achieve high-speed operation. The double-data rate architecture is essentially a 4n-prefetch architecture, with an interface designed to transfer two data words per clock cycle at the I/O balls.
Features:
- VDD = 1.8V ±0.1V, VDDQ = 1.8V ±0.1V
- JEDEC standard 1.8V I/O (SSTL_18-compatible)
- Double data rate interface: two data transfers per clock cycle
- Differential data strobe (DQS, DQS)
- 4-bit prefetch architecture
- On chip DLL to align DQ and DQS transitions with CK
- 4 internal banks for concurrent operation
- Programmable CAS latency (CL) 3, 4, 5, and 6 supported
- Posted CAS and programmable additive latency (AL) 0, 1, 2, 3, 4, and 5 supported
- WRITE latency = READ latency - 1 tCK
- Programmable burst lengths: 4 or 8
- Adjustable data-output drive strength, full and reduced strength options
- On-die termination (ODT)
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