W25Q64JVSSIQ | Winbond 闪存 | Avnet Asia Pacific

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W25Q64JVSSIQ

NOR Flash Serial-SPI 3V 64MBit 64M x 1bit 6ns 8-Pin SOIC

W25Q64JVSSIQ | 闪存 | Winbond
Winbond
制造商: Winbond
产品分类: 内存, 闪存
安富利制造商模型#: W25Q64JVSSIQ
RoHS 10 Compliant

The W25Q64JV (64M-bit) Serial Flash memory provides a storage solution for systems with limited space, pins and power. The 25Q series offers flexibility and performance well beyond ordinary Serial Flash devices. They are ideal for code shadowing to RAM, executing code directly from Dual/Quad SPI (XIP) and storing voice, text and data. The device operates on 2.7V to 3.6V power supply with current consumption as low as 1µA for power-down. All devices are offered in space-saving packages.

The W25Q64JV array is organized into 32,768 programmable pages of 256-bytes each. Up to 256 bytes can be programmed at a time. Pages can be erased in groups of 16 (4KB sector erase), groups of 128 (32KB block erase), groups of 256 (64KB block erase) or the entire chip (chip erase). The W25Q64JV has 2,048 erasable sectors and 128 erasable blocks respectively. The small 4KB sectors allow for greater flexibility in applications that require data and parameter storage.

The W25Q64JV supports the standard Serial Peripheral Interface (SPI), Dual/Quad I/O SPI: Serial Clock, Chip Select, Serial Data I/O0 (DI), I/O1 (DO), I/O2 and I/O3. SPI clock frequencies of W25Q64JV of up to 133MHz are supported allowing equivalent clock rates of 266MHz (133MHz x 2) for Dual I/O and 532MHz (133MHz x 4) for Quad I/O when using the Fast Read Dual/Quad I/O. These transfer rates can outperform standard Asynchronous 8 and 16-bit Parallel Flash memories.

Additionally, the device supports JEDEC standard manufacturer and device ID, and a 64-bit Unique Serial Number and three 256-bytes Security Registers.

技术参数

  • New Family of SpiFlash Memories
    • W25Q64JV: 64M-bit / 8M-byte
    • Standard SPI: CLK, /CS, DI, DO
    • Dual SPI: CLK, /CS, IO0, IO1
    • Quad SPI: CLK, /CS, IO0, IO1, IO2, IO3
    • Software & Hardware Reset(1)
  • Highest Performance Serial Flash
    • More than 100,000 erase/program cycles
    • Min. 100K Program-Erase cycles per sector
    • 133MHz Single, Dual/Quad SPI clocks266/532MHz equivalent Dual/Quad SPI
  • Efficient “Continuous Read”
    • Continuous Read with 8/16/32/64-Byte Wrap
    • As few as 8 clocks to address memory
    • Allows true XIP (execute in place) operation
    • Outperforms X16 Parallel Flash
  • Low Power, Wide Temperature Range
    • Single 2.7 to 3.6V supply
    • <1µA Power-down (typ.)
    • -40°C to +85°C operating range
  • Flexible Architecture with 4KB sectors
    • Uniform Sector/Block Erase (4K/32K/64K-Byte)
    • Program 1 to 256 byte per programmable page
    • Erase/Program Suspend & Resume
  • Advanced Security Features
    • Software and Hardware Write-Protect
    • Special OTP protection(1)
    • Top/Bottom, Complement array protection
    • Individual Block/Sector array protection
    • 64-Bit Unique ID for each device
    • Discoverable Parameters (SFDP) Register
    • 3X256-Bytes Security Registers
    • Volatile & Non-volatile Status Register Bits
  • Space Efficient Packaging
    • 8-pin SOIC 208-mil / VSOP 208-mil
    • 8-pad WSON 6x5-mm/8x6-mm, XSON 4x4-mm
    • 16-pin SOIC 300-mil
    • 8-pin PDIP 300-mil
    • 24-ball TFBGA 8x6-mm (6x4 ball array)
    • 24-ball TFBGA 8x6-mm (6x4/5x5 ball array)
    • Contact Winbond for KGD and other options

技术特性

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描述
闪存类型 NOR
额定电源电压 3 V
最高工作温度 85 °C
最低工作温度 -40 °C
存取时间 6 ns
集成电路安装 Surface Mount
集成电路外壳/封装 SOIC
存储密度 64 Mbit
接口类型 SPI
引脚数 8

ECCN / UNSPSC

描述
ECCN: 3A991.b.1.a
计划交货期 B: 85423290
HTSN: 85423290
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