制造商:
Rohm
SP8M51TB1
Trans MOSFET N/P-CH 100V ±3A/±2.5A 8-Pin SOP T/R
安富利制造商模型#:
SP8M51TB1
RoHS 6 Compliant
NCNR
Obsolete
Complex type MOSFETs(P+N) are made as low ON-resistance devices by the micro-processing technologies useful for wide range of applications.Broad lineup covering compact types, high-power types and complex types to meet various needs in the market.
技术参数
· 4Ｖ-drive type
· Nch+Pch Middle-power MOSFET
· Fast Switching Speed
· Small Surface Mount Package
· Pb Free/RoHS Compliant
· Nch+Pch Middle-power MOSFET
· Fast Switching Speed
· Small Surface Mount Package
· Pb Free/RoHS Compliant
技术特性
查找类似的料号|
|
描述 | 值 |
|---|---|---|
|
|
连续漏极电流Id N沟道 | 3 |
|
|
最高工作温度 | 150 |
|
|
晶体管外壳样式 | SOP |
|
|
沟道类型 | Dual N|P |
|
|
功率耗散N沟道 | 2 |
|
|
引脚数 | 8 |
|
|
漏源电压Vds N沟道 | 100 |
|
|
连续漏极电流Id P沟道 | 2.5 |
|
|
漏源电压Vds P沟道 | 100 |
|
|
漏源导通电阻N沟道 | 170 |
|
|
漏源导通电阻P沟道 | 290 |
ECCN / UNSPSC
| 描述 | 值 |
|---|---|
| ECCN: | EAR99 |
| 计划交货期 B: | 8541290080 |
| HTSN: | 8541290075 |