NSS40300DDR2G | onsemi 双极晶体管阵列 | Avnet Asia Pacific

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NSS40300DDR2G

Bipolar Transistor Array, Dual PNP, 40 V, 3 A

NSS40300DDR2G | 双极晶体管阵列 | onsemi
onsemi
制造商: onsemi
安富利制造商模型#: NSS40300DDR2G
RoHS 10 Compliant

ON Semiconductor's e2PowerEdge family of Low V Bipolar Transistors are surface mount devices featuring ultra low saturation voltage VCE(sat) and high current gain capability. These are designed for use in low voltage, high speed switching applications where affordable efficient energy control is important. Typical applications are low voltage motor controls in mass storage products such as disc drives and tape drives. In the automotive industry they can be used in air bag deployment and in the instrument cluster. The high current gain allows e2PowerEdge devices to be driven directly from PMU's control outputs, and the Linear Gain (Beta) makes them ideal components in analog amplifiers.

技术参数

  • High Current, Low VCEsat, ESD Robust, High Current Gain, High Cut Off Frequency, Low Profile Package, Linear Gain (Beta)

技术特性

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描述
功率耗散PNP 783
晶体管安装 Surface Mount
引脚数 8
晶体管外壳样式 SOIC
最高工作温度 150 °C
最大集电极发射极电压PNP 40
过渡频率PNP 100
直流电流增益hFE最小值PNP 250
连续集电极电流PNP 3
直流电流增益hFE最小值NPN 250
连续集电极电流NPN 3
晶体管极性 Dual PNP, PNP

ECCN / UNSPSC

描述
ECCN: EAR99
计划交货期 B: 8541210080
HTSN: 8542390001
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