制造商:
onsemi
NGTB40N120FL2WG
IGBT, 80 A, 2 V, 535 W, 1.2 kV, TO-247, 3 Pins
安富利制造商模型#:
NGTB40N120FL2WG
RoHS 10 Compliant
This Insulated Gate Bipolar Transistor (IGBT) features a robust andcost effective Field Stop II Trench construction, and provides superiorperformance in demanding switching applications, offering both lowon state voltage and minimal switching loss. The IGBT is well suitedfor UPS and solar applications. Incorporated into the device is a softand fast co−packaged free wheeling diode with a low forward voltage.
技术参数
- Extremely Efficient Trench with Field Stop Technology
- TJmax = 175°C
- Soft Fast Reverse Recovery Diode
- Optimized for High Speed Switching
- 10 µs Short Circuit Capability
技术特性
查找类似的料号|
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描述 | 值 |
|---|---|---|
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最高工作温度 | 175 |
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晶体管外壳样式 | TO-247 |
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引脚数 | 3 |
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功率耗散 | 535 |
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最大集电极发射极电压 | 1.2 |
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集电极发射极饱和电压 | 2 |
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连续集电极电流 | 80 |
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晶体管安装 | Through Hole |
ECCN / UNSPSC
| 描述 | 值 |
|---|---|
| ECCN: | EAR99 |
| 计划交货期 B: | PARTS... |
| HTSN: | PARTS... |