MMUN2213LT1G | onsemi 数字晶体管 | Avnet Asia Pacific

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MMUN2213LT1G

Digital Transistor, NPN, 50 V, 100 mA, 47 kOhm, 47 kOhm, SOT-23 (TO-236), 3 Pins

MMUN2213LT1G | 数字晶体管 | onsemi
onsemi
制造商: onsemi
安富利制造商模型#: MMUN2213LT1G
RoHS 10 Compliant

This series of digital transistors is designed to replace a single device and its external resistor bias network. The Bias Resistor Transistor (BRT) contains a single transistor with a monolithic bias network consisting of two resistors; a series base resistor and a base-emitter resistor. The BRT eliminates these individual components by integrating them into a single device. The use of a BRT can reduce both system cost and board space.

技术参数

  • Simplifies Circuit Design
  • Reduces Board Space
  • Reduces Component Count
  • These Devices are PbFree, Halogen Free/BFR Free and are RoHS Compliant

技术特性

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描述
最高工作温度 150 °C
晶体管外壳样式 SOT-23
直流电流增益hFE最小值 80
引脚数 3
晶体管安装 Surface Mount
基极发射极输入电阻R2 47 kOhm
基极输入电阻R1  47 kOhm
功率耗散 400 mW
MSL 级别 MSL 1 - Unlimited
最大集电极发射极电压NPN 50 V
连续集电极电流 100 mA
晶体管极性 NPN

ECCN / UNSPSC

描述
ECCN: EAR99
计划交货期 B: PARTS...
HTSN: PARTS...
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