制造商:
onsemi
MJD117T4G
Darlington Transistor, PNP, 100 V, 20 W, 2 A, TO-252 (DPAK), 4 Pins
安富利制造商模型#:
MJD117T4G
RoHS 10 Exempt
The Darlington Bipolar Power Transistor is designed for general purpose power and switching such as output or driver stages in applications such as switching regulators, converters and power amplifiers. The MJD112 (NPN) and MJD117 (PNP) are complementary devices.
技术参数
- Lead Formed for Surface Mount Applications in Plastic Sleeves (No Suffix)
- Straight Lead Version in Plastic Sleeves ("1" Suffix)
- Lead Formed Version in 16 mm Tape and Reel ("T4" Suffix)
- Surface Mount Replacements for TIP110-TIP117 Series
- Monolithic Construction With Built-in Base-Emitter Shunt Resistors
- High DC Current GainhFE = 2500 (Typ) @ IC = 2.0 Adc
- Complementary Pairs Simplifies Designs
- NJV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable
- PbFree Packages are Available
技术特性
查找类似的料号|
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描述 | 值 |
|---|---|---|
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引脚数 | 3 |
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晶体管极性 | PNP |
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连续集电极电流 | 2 |
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最大集电极发射极电压 | 100 |
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功率耗散 | 20 |
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晶体管外壳样式 | TO-252 (DPAK) |
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晶体管安装 | Surface Mount |
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直流电流增益hFE最小值 | 1000 |
ECCN / UNSPSC
| 描述 | 值 |
|---|---|
| ECCN: | EAR99 |
| 计划交货期 B: | 8541290080 |
| HTSN: | 8541290095 |