制造商:
onsemi
MBT3906DW1T1G
Bipolar Transistor Array, Dual PNP, 40 V, 200 mA, 150 mW, 100 hFE, SOT-363, 6 Pins
安富利制造商模型#:
MBT3906DW1T1G
RoHS 10 Compliant
Tape & Reel
The Dual PNP Bipolar Transistor is a spin-off of our popular SOT-23/SOT-323 three-leaded device. It is designed for general purpose amplifier applications and is housed in the SOT-363 six-leaded surface mount package. By putting two discrete devices in one package, this device is ideal for low-power surface mount applications where board space is at a premium.
技术参数
- hFE, 100-300
- Low VCE(sat), ≤ 0.4 V
- Simplifies Circuit Design
- Reduces Board Space
- Reduces Component Count
- Available in 8 mm, 7-inch/3,000 Unit Tape and Reel
- Device Marking: MBT3906DW1T1 = A2
- Pb-Free Package is Available
- S and NSV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable
技术特性
查找类似的料号|
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描述 | 值 |
|---|---|---|
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晶体管安装 | Surface Mount |
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引脚数 | 6 |
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最高工作温度 | 150 °C |
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晶体管外壳样式 | SOT-363 |
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MSL 级别 | MSL 1 - Unlimited |
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最大集电极发射极电压 | 40 |
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连续集电极电流 | 200 |
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直流电流增益hFE最小值 | 100@10mA@1V |
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晶体管极性 | NPN |
ECCN / UNSPSC
| 描述 | 值 |
|---|---|
| ECCN: | EAR99 |
| 计划交货期 B: | PARTS... |
| HTSN: | PARTS... |