制造商:
onsemi
FGH75T65SQDT-F155
Transistor I GBT N-CH 650V 150A 3-Pin TO-247 Tube
安富利制造商模型#:
FGH75T65SQDT-F155
RoHS 10 Exempt
Using novel field stop IGBT technology, ON semiconductor’s new series of field stop 4th generation IGBTs offer he optimum performance for solar inverter, UPS, welder, telecom, ESS and PFC applications where low conduction and switching losses are essential.
技术参数
- Maximum Junction Temperature: TJ = 175 o C
- Positive Temperature Co-efficient for Easy Parallel Operating
- High Current Capability
- Low Saturation Voltage: VCE(sat) = 1.6 V ( Typ.) @ I C = 75 A
- 100% of the Parts tested for ILM
- High Input Impedance
- Fast Switching
- Tighten Parameter Distribution
- RoHS Compliant
技术特性
查找类似的料号|
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描述 | 值 |
|---|---|---|
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最高工作温度 | 175 |
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功率耗散 | 375 |
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连续集电极电流 | 150 |
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晶体管安装 | Through Hole |
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引脚数 | 3 |
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最大集电极发射极电压 | 650 |
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集电极发射极饱和电压 | 1.6 |
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晶体管外壳样式 | TO-247 |
ECCN / UNSPSC
| 描述 | 值 |
|---|---|
| ECCN: | EAR99 |
| 计划交货期 B: | 8541290080 |
| HTSN: | 8541290095 |
文档
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文档
| 标题 | 下载 | 类别 | 发布日期 |
|---|---|---|---|
| Change TO247 mold downset A1 remark position from lead tip to lead root. | Errata-Sheets | 20200106 |