制造商:
onsemi
FDS8876
Trans MOSFET N-CH 30V 12.5A 8-Pin SOIC N T/R
安富利制造商模型#:
FDS8876
RoHS 10 Compliant
NCNR
Obsolete
This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low rDS(on) and fast switching speed.
技术参数
- rDS(on) = 8.2mΩ, VGS = 10V, ID = 12.5A
- rDS(on) = 10.2mΩ, VGS = 4.5V, ID = 11.4A
- High performance trench technology for extremely low rDS(on)
- Low gate charge
- High power and current handling capability
- RoHS Compliant
技术特性
查找类似的料号|
|
描述 | 值 |
|---|---|---|
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导通电阻测试电压 | 10 |
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最高工作温度 | 150 |
|
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功率耗散 | 2.5 |
|
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沟道类型 | N |
|
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漏源导通电阻 | 8.2 |
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引脚数 | 8 |
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晶体管安装 | Surface Mount |
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漏源电压Vds | 30 |
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晶体管外壳样式 | SOIC |
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MSL 级别 | MSL 1 - Unlimited |
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连续漏极电流Id | 12.5 |
ECCN / UNSPSC
| 描述 | 值 |
|---|---|
| ECCN: | EAR99 |
| 计划交货期 B: | 8541290080 |
| HTSN: | 8541290095 |
文档
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文档
| 标题 | 下载 | 类别 | 发布日期 |
|---|---|---|---|
| FDS8876 8LD, JEDEC MS-012, .150"NARROW BODY | Part-Block-Diagram | 20050428 |