制造商:
onsemi
FDS6575
晶体管, MOSFET, P沟道, -10 A, -20 V, 0.0085 ohm, -4.5 V, -600 mV
安富利制造商模型#:
FDS6575
RoHS 10 Compliant
NCNR
Obsolete
The FDS6575 is a 2.5V specified P-channel MOSFET produced using rugged gate version of advanced PowerTrench® process. It has been optimized for load switch and battery protection applications with a wide range of gate drive voltage (2.5 to 8V).
技术参数
- Low gate charge
- High performance Trench technology for extremely low RDS (ON)
- High current and power handling capability
技术特性
查找类似的料号|
|
描述 | 值 |
|---|---|---|
|
|
导通电阻测试电压 | 4.5 |
|
|
沟道类型 | P |
|
|
最高工作温度 | 175 |
|
|
漏源导通电阻 | 13 |
|
|
引脚数 | 8 |
|
|
连续漏极电流Id | 10 |
|
|
晶体管安装 | Surface Mount |
|
|
晶体管外壳样式 | SOIC |
|
|
漏源电压Vds | 20 |
|
|
功率耗散 | 2.5 |
|
|
MSL 级别 | MSL 1 - Unlimited |
ECCN / UNSPSC
| 描述 | 值 |
|---|---|
| ECCN: | EAR99 |
| 计划交货期 B: | 8541290080 |
| HTSN: | 8541290095 |
文档
您需要登录才能查看内容
文档
| 标题 | 下载 | 类别 | 发布日期 |
|---|---|---|---|
| FDS6575 8LD, JEDEC MS-012, .150"NARROW BODY | Part-Block-Diagram | 19981208 |