制造商:
onsemi
FDS4897AC
双路场效应管, MOSFET, N和P沟道, 6.1 A, 40 V, 0.02 ohm, 10 V, 2 V
安富利制造商模型#:
FDS4897AC
RoHS 10 Compliant
NCNR
Obsolete
These dual N- and P-Channel MOSFETs are produced using advanced PowerTrench process that has been especially tailored to minimize on-state resistance and yet maintain superior switching performance.
技术参数
- Q1: N-Channel
- Max. RDS(on) = 26 mΩ at VGS = 10 V, ID = 6.1 A
- Max. RDS(on) = 31 mΩ at VGS = 4.5 V, ID = 5.6 A
- Q2: P-Channel
- Max. RDS(on) = 39 mΩat VGS = -10 V, ID = -5.2 A
- Max. RDS(on) = 65 mΩ at VGS = -4.5 V, ID= -4.1 A
- 100% UIL Tested
- RoHS Compliant
技术特性
查找类似的料号|
|
描述 | 值 |
|---|---|---|
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MSL 级别 | MSL 1 - Unlimited |
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连续漏极电流Id N沟道 | 6.1 |
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漏源导通电阻N沟道 | 26 |
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连续漏极电流Id P沟道 | 5.2 |
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漏源电压Vds P沟道 | 40 |
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漏源电压Vds N沟道 | 40 |
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功率耗散P沟道 | 2 |
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功率耗散N沟道 | 2 |
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晶体管外壳样式 | SOIC |
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引脚数 | 8 |
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沟道类型 | Dual N|P |
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最高工作温度 | 150 |
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漏源导通电阻P沟道 | 39 |
ECCN / UNSPSC
| 描述 | 值 |
|---|---|
| ECCN: | EAR99 |
| 计划交货期 B: | 8541290080 |
| HTSN: | 8541290095 |
文档
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文档
| 标题 | 下载 | 类别 | 发布日期 |
|---|---|---|---|
| FDS4897AC 8LD, JEDEC MS-012, .150"NARROW BODY | Part-Block-Diagram | 20081102 |