制造商:
onsemi
BC847BPDW1T1G
Bipolar Transistor Array, Complementary NPN and PNP, 45 V, 100 mA, 380 mW, 200 hFE, 6 Pins, SOT-363
安富利制造商模型#:
BC847BPDW1T1G
RoHS 10 Compliant
The Dual NPN PNP Bipolar Transistor is designed for general purpose amplifier applications. It is housed in the SOT-363/SC-88 package, which is designed for low power surface mount applications.
技术参数
- Collector − Emitter Breakdown Voltage 45 V
- Pb−Free Devices are available
技术特性
查找类似的料号|
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描述 | 值 |
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直流电流增益hFE最小值PNP | 200 |
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产品范围 | BC847BPDW1 Ser |
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最高工作温度 | 150 °C |
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晶体管外壳样式 | SOT-363 |
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直流电流增益hFE最小值NPN | 200 |
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晶体管极性 | Complementary, PNP |
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MSL 级别 | MSL 1 - Unlimited |
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功率耗散PNP | 380 mW |
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最大集电极发射极电压PNP | 45 V |
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最大集电极发射极电压NPN | 45 V |
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功率耗散NPN | 380 mW |
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连续集电极电流NPN | 100 mA |
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过渡频率NPN | 100 MHz |
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连续集电极电流PNP | 100 mA |
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过渡频率PNP | 100 MHz |
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引脚数 | 6 |
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晶体管安装 | Surface Mount |
ECCN / UNSPSC
| 描述 | 值 |
|---|---|
| ECCN: | EAR99 |
| 计划交货期 B: | PARTS... |
| HTSN: | PARTS... |