制造商:
Nexperia
PMXB65UPEZ
Trans MOSFET P-CH 12V 3.2A 3-Pin DFN T/R
安富利制造商模型#:
PMXB65UPEZ
RoHS 6 Compliant
P-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small DFN1010D-3 (SOT1215) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.
技术参数
- Trench MOSFET technology
- Leadless ultra small and ultra thin SMD plastic package: 1.1 × 1.0 × 0.37 mm
- Exposed drain pad for excellent thermal conduction
- ElectroStatic Discharge (ESD) protection 1.5 kV HBM
- Drain-source on-state resistance RDSon = 59 mΩ
- Very low gate-source threshold voltage for portable applications VGS(th) = -0.68 V
技术特性
查找类似的料号|
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描述 | 值 |
|---|---|---|
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最高工作温度 | 150 |
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导通电阻测试电压 | 4.5 |
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晶体管外壳样式 | SOT-1215 |
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连续漏极电流Id | 3.2 |
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功率耗散 | 1.07 |
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漏源导通电阻 | 72 |
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引脚数 | 3 |
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晶体管安装 | Surface Mount |
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MSL 级别 | MSL 1 - Unlimited |
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沟道类型 | P |
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漏源电压Vds | 12 |
ECCN / UNSPSC
| 描述 | 值 |
|---|---|
| ECCN: | EAR99 |
| 计划交货期 B: | 8541210080 |
| HTSN: | 8541210095 |